Physical and Optical Properties of Cobalt Doped Nickel Oxied Thin Films Fabricant Semiconductor

Abstract

Nickel oxide is one of the most important semiconductor materials in the environmental field due to the detecting ability of toxic gases. Nickel oxide (NiO) has a several different applications in the field pizoelectronic, optoelectronic. Moreover, it is used to find suitable material with enhanced properties for gas sensing applications for detecting the sensibility in the environment such as NOx, SOx, CO, CO2…, at high temperature. However, several studies have been made to find that the NiO have a high optical transparency and good electrical conductivity at various experimental conditions. NiO thin films have a direct band gap ranging from 3.5 to 4.3 eV.