Investigation of optical properties of Sb2S3 thin films grown based temperature

Abstract

In this study, Sb2S3 thin films grown at 275 oC, 300 oC and 325 oC temperature using the ultrasonic Spray Pyrolysis method were examined related to optical properties. The energy band gaps of Sb2S3-275 oC, Sb2S3-300 oC and Sb2S3-325 oC thin films were obtained as 2.36 eV, 2.47 eV and 1.84 eV, respectively, using UV-Vis spectrophotometer measurement system between 300-1100 nm. Amount of photon value of the fabricated Sb2S3-275 oC, Sb2S3-300 oC and Sb2S3-325 oC thin films calculated using absorbance values. , the extinction coefficient, skin depth, optical conductivity spectra were obtained depending on the wavelength (Y) over a wavelength range of 300-1100 nm in the spectrum and photon energy in this work. The refraction indices and dielectric constants of the samples were calculated by Herve and Vandamme, Moss and Ravindra relations. Eg values for Sb2S3-275 oC, Sb2S3-300 oC and Sb2S3-325 oC thin films have been determined and reported in this work to be 1.59 eV, 2.75 eV and 0.43 eV, respectively.